Discrete Semiconductor Products

STGD7NB60ST4

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7 A, 600 V, LOW DROP IGBT

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Discrete Semiconductor Products

Active

7 A, 600 V, LOW DROP IGBT

Technical Specifications

Parameters and characteristics for this part

Specification	STGD7NB60ST4

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Pulsed (Icm)	60 A
Gate Charge	33 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	55 W
Supplier Device Package	DPAK
Switching Energy	3.5 mJ
Td (on/off) @ 25°C	700ns/-
Test Condition	480 V, 15 V, 1 kOhm, 7 A
Vce(on) (Max) @ Vge, Ic [Max]	1.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Power - Max [Max]	Mounting Type	Gate Charge	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Test Condition	Switching Energy	Operating Temperature	Vce(on) (Max) @ Vge, Ic [Max]	Current - Collector (Ic) (Max) [Max]
STMicroelectronics STGD7NB120ST4	-	570 ns	55 W	Surface Mount	29 nC	20 A	1200 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	2.1 V	1 kOhm 7 A 15 V 960 V	3.2 µJ 15 mJ
STMicroelectronics STGD7NB60ST4	700ns/-		55 W	Surface Mount	33 nC	60 A	600 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK		1 kOhm 7 A 15 V 480 V	3.5 mJ	150 °C	1.6 V	15 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This IGBT uses the advanced PowerMESH process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).