Discrete Semiconductor Products

RJK03P9DPA-00#J5A

Obsolete

BUILT IN SBD DUAL N-CHANNEL POWER MOSFET

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Discrete Semiconductor Products

Obsolete

BUILT IN SBD DUAL N-CHANNEL POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	RJK03P9DPA-00#J5A

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	50 A, 20 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	4.5 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	7.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1660 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-WFDFN Exposed Pad
Power - Max [Max]	35 W
Power - Max [Min]	15 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature	FET Feature	Operating Temperature	Power - Max [Min]	Power - Max [Max]	Mounting Type	Configuration	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation RJK03P9DPA-00#J5A	7 mOhm	8-WPAK	1660 pF	4.5 V	Logic Level Gate	150 °C	15 W	35 W	Surface Mount	2 N-Channel	20 A 50 A	8-WFDFN Exposed Pad	MOSFET (Metal Oxide)	7.7 nC	30 V

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General part information

The RJK03P9DPA is a Built In Sbd Dual N-Channel Power MOSFET.

Technical documentation and resources