RJK03P9DPA Series

Catalog

BUILT IN SBD DUAL N-CHANNEL POWER MOSFET

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Feature	FET Feature	Operating Temperature	Power - Max [Min]	Power - Max [Max]	Mounting Type	Configuration	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation RJK03P9DPA-00#J5A	7 mOhm	8-WPAK	1660 pF	4.5 V	Logic Level Gate	150 °C	15 W	35 W	Surface Mount	2 N-Channel	20 A 50 A	8-WFDFN Exposed Pad	MOSFET (Metal Oxide)	7.7 nC	30 V