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SOT8013
Discrete Semiconductor Products

PMX700ENZ

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Nexperia USA Inc.

60 V, N-CHANNEL TRENCH MOSFET

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SOT8013
Discrete Semiconductor Products

PMX700ENZ

Active
Nexperia USA Inc.

60 V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMX700ENZ
Current - Continuous Drain (Id) @ 25°C300 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]39 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case0603 Metric
Package / Case0201
Power Dissipation (Max)4.7 W, 300 mW
Rds On (Max) @ Id, Vgs800 mOhm
Supplier Device PackageDFN0603-3 (SOT8013)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.40
10$ 0.29
100$ 0.14
500$ 0.13
1000$ 0.10
2000$ 0.09
5000$ 0.09
Digi-Reel® 1$ 0.40
10$ 0.29
100$ 0.14
500$ 0.13
1000$ 0.10
2000$ 0.09
5000$ 0.09
N/A 6218$ 0.55
Tape & Reel (TR) 15000$ 0.08
30000$ 0.08
75000$ 0.06
105000$ 0.06

Description

General part information

PMX700EN Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.