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60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0603-3 (SOT8013) Surface-Mounted Device (SMD) using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Package / Case | Rds On (Max) @ Id, Vgs | Vgs (Max) | Technology | Power Dissipation (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 300 mA | 1.1 nC | 2.5 V | 60 V | 150 °C | -55 °C | DFN0603-3 (SOT8013) | Surface Mount | 4.5 V 10 V | 39 pF | 0603 Metric | 0201 | 800 mOhm | 20 V | MOSFET (Metal Oxide) | 4.7 W 300 mW | N-Channel |