Discrete Semiconductor Products

GB05MPS17-263

Obsolete

DIODE SIL CARB 1.7KV 18A TO263-7

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 1.7KV 18A TO263-7

Technical Specifications

Parameters and characteristics for this part

Specification	GB05MPS17-263

Capacitance @ Vr, F	470 pF
Current - Average Rectified (Io)	18 A
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-263-7
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1700 V

Part	Technology	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Speed	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Supplier Device Package
GeneSiC Semiconductor GB05MPS17-247	SiC (Silicon Carbide) Schottky	1.8 V 5 A	1700 V	175 ░C	-55 °C	TO-247-2	334 pF	0 ns	500 mA	Through Hole	6 µA	25 A	TO-247-2
GeneSiC Semiconductor GB05MPS17-263	SiC (Silicon Carbide) Schottky		1700 V	175 ░C	-55 °C	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	470 pF	0 ns	500 mA	Surface Mount		18 A	TO-263-7

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 5.57

General part information

Diode 1700 V 18A Surface Mount TO-263-7

Technical documentation and resources