GB05MPS17 Series
Manufacturer: GeneSiC Semiconductor
DIODE SIL CARB 1700V 25A TO2472
| Part | Technology | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Speed | Mounting Type | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | SiC (Silicon Carbide) Schottky | 1.8 V 5 A | 1700 V | 175 ░C | -55 °C | TO-247-2 | 334 pF | 0 ns | 500 mA | Through Hole | 6 µA | 25 A | TO-247-2 |
GeneSiC Semiconductor | SiC (Silicon Carbide) Schottky | 1700 V | 175 ░C | -55 °C | D2PAK (7 Leads + Tab) TO-263-8 TO-263CA | 470 pF | 0 ns | 500 mA | Surface Mount | 18 A | TO-263-7 |