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Technical Specifications

Parameters and characteristics for this part

SpecificationPXN010-30QLJ
Current - Continuous Drain (Id) @ 25°C28 A, 10.3 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]580 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)12.5 W, 1.7 W
Rds On (Max) @ Id, Vgs10.2 mOhm
Supplier Device PackageMLPAK33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.48
10$ 0.41
25$ 0.38
100$ 0.30
250$ 0.28
500$ 0.24
1000$ 0.18
Digi-Reel® 1$ 0.48
10$ 0.41
25$ 0.38
100$ 0.30
250$ 0.28
500$ 0.24
1000$ 0.18
N/A 8098$ 0.47
Tape & Reel (TR) 3000$ 0.17
6000$ 0.16
15000$ 0.15
30000$ 0.14

Description

General part information

PXN010-30QL Series

N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.