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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Vgs(th) (Max) @ Id | Technology | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | FET Type | Mounting Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 150 °C | -55 °C | 10.2 mOhm | 4.5 V 10 V | 8-PowerVDFN | 2.2 V | MOSFET (Metal Oxide) | 10.3 A 28 A | MLPAK33 | 20 V | 30 V | 580 pF | 12.3 nC | N-Channel | Surface Mount | 1.7 W 12.5 W |