Discrete Semiconductor Products

IRFBF20STRLPBF

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MOSFET N-CH 900V 1.7A D2PAK

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Discrete Semiconductor Products

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MOSFET N-CH 900V 1.7A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFBF20STRLPBF

Current - Continuous Drain (Id) @ 25°C	1.7 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.1 W, 54 W
Rds On (Max) @ Id, Vgs	8 Ohm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division IRFBF20PBF	TO-220AB	54 W	8 Ohm	20 V	-55 °C	150 °C	Through Hole	1.7 A	900 V	TO-220-3	MOSFET (Metal Oxide)	4 V	10 V	38 nC	N-Channel
Vishay General Semiconductor - Diodes Division IRFBF20LPBF	I2PAK		8 Ohm	20 V	-55 °C	150 °C	Through Hole	1.7 A	900 V	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	4 V	10 V	38 nC	N-Channel	3.1 W 54 W
Vishay General Semiconductor - Diodes Division IRFBF20S	TO-263 (D2PAK)		8 Ohm	20 V	-55 °C	150 °C	Surface Mount	1.7 A	900 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	4 V	10 V	38 nC	N-Channel	3.1 W 54 W
Vishay General Semiconductor - Diodes Division IRFBF20STRRPBF	TO-263 (D2PAK)		8 Ohm	20 V	-55 °C	150 °C	Surface Mount	1.7 A	900 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	4 V	10 V	38 nC	N-Channel	3.1 W 54 W
Vishay General Semiconductor - Diodes Division IRFBF20STRLPBF	TO-263 (D2PAK)		8 Ohm	20 V	-55 °C	150 °C	Surface Mount	1.7 A	900 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	4 V	10 V	38 nC	N-Channel	3.1 W 54 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 900 V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources