IRFBF20 Series

Catalog

MOSFET N-CH 900V 1.7A TO220AB

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division IRFBF20PBF	TO-220AB	54 W	8 Ohm	20 V	-55 °C	150 °C	Through Hole	1.7 A	900 V	TO-220-3	MOSFET (Metal Oxide)	4 V	10 V	38 nC	N-Channel
Vishay General Semiconductor - Diodes Division IRFBF20LPBF	I2PAK		8 Ohm	20 V	-55 °C	150 °C	Through Hole	1.7 A	900 V	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	4 V	10 V	38 nC	N-Channel	3.1 W 54 W
Vishay General Semiconductor - Diodes Division IRFBF20S	TO-263 (D2PAK)		8 Ohm	20 V	-55 °C	150 °C	Surface Mount	1.7 A	900 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	4 V	10 V	38 nC	N-Channel	3.1 W 54 W
Vishay General Semiconductor - Diodes Division IRFBF20STRRPBF	TO-263 (D2PAK)		8 Ohm	20 V	-55 °C	150 °C	Surface Mount	1.7 A	900 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	4 V	10 V	38 nC	N-Channel	3.1 W 54 W
Vishay General Semiconductor - Diodes Division IRFBF20STRLPBF	TO-263 (D2PAK)		8 Ohm	20 V	-55 °C	150 °C	Surface Mount	1.7 A	900 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)	4 V	10 V	38 nC	N-Channel	3.1 W 54 W