STN9360
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, PNP, -600 V, 1.6 W, -500 MA, 120 HFE
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STN9360
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, PNP, -600 V, 1.6 W, -500 MA, 120 HFE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STN9360 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 500 mA |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 120 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power - Max [Max] | 1.6 W |
| Supplier Device Package | SOT-223 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
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Description
General part information
STN9360 Series
This device is a high voltage fast-switching PNP power transistor. It is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.
Documents
Technical documentation and resources