Discrete Semiconductor Products

SIRA20BDP-T1-GE3

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MOSFET N-CH 25V 82A/335A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 25V 82A/335A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIRA20BDP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	335 A, 82 A
Drain to Source Voltage (Vdss)	25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	186 nC
Input Capacitance (Ciss) (Max) @ Vds	9950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.3 W, 104 W
Rds On (Max) @ Id, Vgs	0.58 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-12 V, 16 V
Vgs(th) (Max) @ Id	2.1 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Technology	Package / Case
Vishay General Semiconductor - Diodes Division SIRA20BDP-T1-GE3	82 A 335 A	9950 pF	-12 V 16 V	186 nC	Surface Mount	-55 °C	150 °C	2.1 V	6.3 W 104 W	0.58 mOhm	25 V	N-Channel	PowerPAK® SO-8	MOSFET (Metal Oxide)	PowerPAK® SO-8

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General part information

N-Channel 25 V 82A (Ta), 335A (Tc) 6.3W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources