SIRA20 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 25V 82A/335A PPAK
| Part | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | FET Type | Supplier Device Package | Technology | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 82 A 335 A | 9950 pF | -12 V 16 V | 186 nC | Surface Mount | -55 °C | 150 °C | 2.1 V | 6.3 W 104 W | 0.58 mOhm | 25 V | N-Channel | PowerPAK® SO-8 | MOSFET (Metal Oxide) | PowerPAK® SO-8 |