Discrete Semiconductor Products

STGFW20H65FB

Obsolete

IGBT 650V 40A 52W TO3PF

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Discrete Semiconductor Products

Obsolete

IGBT 650V 40A 52W TO3PF

Technical Specifications

Parameters and characteristics for this part

Specification	STGFW20H65FB

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	80 A
Gate Charge	120 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3PFM, SC-93-3
Power - Max [Max]	52 W
Supplier Device Package	TO-3PF
Switching Energy	170 µJ, 77 µJ
Td (on/off) @ 25°C	139 ns, 30 ns
Test Condition	20 A, 10 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic [Max]	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Td (on/off) @ 25°C	Gate Charge	IGBT Type	Current - Collector (Ic) (Max) [Max]	Switching Energy	Vce(on) (Max) @ Vge, Ic [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)	Package / Case	Power - Max [Max]	Test Condition	Supplier Device Package
STMicroelectronics STGFW20H65FB	30 ns 139 ns	120 nC	Trench Field Stop	40 A	77 µJ 170 µJ	2 V	175 °C	-55 °C	Through Hole	650 V	80 A	SC-93-3 TO-3PFM	52 W	10 Ohm 15 V 20 A 400 V	TO-3PF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 650 V 40 A 52 W Through Hole TO-3PF

Technical documentation and resources