Discrete Semiconductor Products

STW45NM50FD

Obsolete

MOSFET N-CH 500V 45A TO247-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 500V 45A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW45NM50FD

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	417 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Mounting Type	FET Type	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package
STMicroelectronics STW45NM50FD	100 mOhm	5 V	30 V	150 °C	-65 °C	TO-247-3	10 V	45 A	120 nC	500 V	MOSFET (Metal Oxide)	Through Hole	N-Channel	417 W	3600 pF	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 7.24

General part information

N-Channel 500 V 45A (Tc) 417W (Tc) Through Hole TO-247-3

Technical documentation and resources