Discrete Semiconductor Products

SI2308BDS-T1-E3

LTB

MOSFET N-CH 60V 2.3A SOT23-3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 60V 2.3A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI2308BDS-T1-E3

Current - Continuous Drain (Id) @ 25°C	2.3 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.8 nC
Input Capacitance (Ciss) (Max) @ Vds	190 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.09 W, 1.66 W
Rds On (Max) @ Id, Vgs	156 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI2308BDS-T1-E3	-55 °C	150 °C	190 pF	156 mOhm	MOSFET (Metal Oxide)	SOT-23-3 (TO-236)	N-Channel	1.09 W 1.66 W	4.5 V 10 V	20 V	Surface Mount	3 V	2.3 A	6.8 nC	SC-59 SOT-23-3 TO-236-3	60 V

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General part information

N-Channel 60 V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources

No documents available