SI2308 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 60V 2.3A SOT23-3
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Technology | Supplier Device Package | FET Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Mounting Type | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 190 pF | 156 mOhm | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | N-Channel | 1.09 W 1.66 W | 4.5 V 10 V | 20 V | Surface Mount | 3 V | 2.3 A | 6.8 nC | SC-59 SOT-23-3 TO-236-3 | 60 V |