Discrete Semiconductor Products

SQJQ960EL-T1_GE3

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MOSFET 2N-CH 60V 63A PPAK8X8

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 63A PPAK8X8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJQ960EL-T1_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	63 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	24 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 8 x 8 Dual
Power - Max [Max]	71 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	PowerPAK® 8 x 8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Package / Case	Configuration	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Qualification	Power - Max [Max]	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Grade
Vishay General Semiconductor - Diodes Division SQJQ960EL-T1_GE3	-55 °C	175 ░C	MOSFET (Metal Oxide)	PowerPAK® 8 x 8 Dual	2 N-Channel (Dual)	9 mOhm	24 nC	AEC-Q101	71 W	PowerPAK® 8 x 8 Dual	Surface Mount	63 A	60 V	2.5 V	1950 pF	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 63A (Tc) 71W Surface Mount PowerPAK® 8 x 8 Dual

Technical documentation and resources