SQJQ960 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 60V 63A PPAK8X8
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Package / Case | Configuration | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Qualification | Power - Max [Max] | Supplier Device Package | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 175 ░C | MOSFET (Metal Oxide) | PowerPAK® 8 x 8 Dual | 2 N-Channel (Dual) | 9 mOhm | 24 nC | AEC-Q101 | 71 W | PowerPAK® 8 x 8 Dual | Surface Mount | 63 A | 60 V | 2.5 V | 1950 pF | Automotive |