Discrete Semiconductor Products

ST13007

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BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 400 V, 8 A, 80 W, TO-220AB, THROUGH HOLE

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Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 400 V, 8 A, 80 W, TO-220AB, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	ST13007

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	5
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	80 W
Supplier Device Package	TO-220
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	400 V

High voltage fast-switching NPN power transistor

Part	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Supplier Device Package
STMicroelectronics ST13007	NPN	3 V	10 µA	Through Hole	5	150 °C	80 W	400 V	TO-220-3	8 A	TO-220

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

They use a Cellular Emitter structure to enhance switching speeds.

Technical documentation and resources