Discrete Semiconductor Products

FCD4N60TM_WS

Obsolete

MOSFET N-CH 600V 3.9A DPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 3.9A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	FCD4N60TM_WS

Current - Continuous Drain (Id) @ 25°C	3.9 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16.6 nC
Input Capacitance (Ciss) (Max) @ Vds	540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Supplier Device Package
ON Semiconductor FCD4N60TF	1.2 Ohm	3.9 A	30 V	50 W	540 pF	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	16.6 nC	MOSFET (Metal Oxide)	5 V	-55 °C	150 °C	600 V	N-Channel	Surface Mount	TO-252AA
ON Semiconductor FCD4N60TM_WS	1.2 Ohm	3.9 A	30 V	50 W	540 pF	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	16.6 nC	MOSFET (Metal Oxide)	5 V	-55 °C	150 °C	600 V	N-Channel	Surface Mount	TO-252AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 3.9A (Tc) 50W (Tc) Surface Mount TO-252AA

Technical documentation and resources