FCD4 Series

Catalog

MOSFET N-CH 600V 3.9A DPAK

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Supplier Device Package
ON Semiconductor FCD4N60TF	1.2 Ohm	3.9 A	30 V	50 W	540 pF	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	16.6 nC	MOSFET (Metal Oxide)	5 V	-55 °C	150 °C	600 V	N-Channel	Surface Mount	TO-252AA
ON Semiconductor FCD4N60TM_WS	1.2 Ohm	3.9 A	30 V	50 W	540 pF	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	16.6 nC	MOSFET (Metal Oxide)	5 V	-55 °C	150 °C	600 V	N-Channel	Surface Mount	TO-252AA