STGWA75H65DFB2
ActiveTRENCH GATE FIELD-STOP, 650 V, 75 A, HIGH-SPEED HB2 SERIES IGBT IN A TO-247 LONG LEADS PACKAGE
STGWA75H65DFB2
ActiveTRENCH GATE FIELD-STOP, 650 V, 75 A, HIGH-SPEED HB2 SERIES IGBT IN A TO-247 LONG LEADS PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STGWA75H65DFB2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 115 A |
| Current - Collector Pulsed (Icm) | 225 A |
| Gate Charge | 207 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 357 W |
| Reverse Recovery Time (trr) | 88 ns |
| Supplier Device Package | TO-247 Long Leads |
| Switching Energy | 1.428 mJ, 1.05 mJ |
| Td (on/off) @ 25°C | 28 ns, 100 ns |
| Test Condition | 75 A, 15 V, 2.2 Ohm, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
STGWA75H65DFB2 Series
Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package
| Part | Current - Collector Pulsed (Icm) | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Voltage - Collector Emitter Breakdown (Max) [Max] | IGBT Type | Vce(on) (Max) @ Vge, Ic | Supplier Device Package | Gate Charge | Td (on/off) @ 25°C | Reverse Recovery Time (trr) | Test Condition | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Package / Case | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 225 A | Through Hole | 175 °C | -55 °C | 650 V | Trench Field Stop | 2 V | TO-247 Long Leads | 207 nC | 28 ns 100 ns | 88 ns | 2.2 Ohm 15 V 75 A 400 V | 115 A | 357 W | TO-247-3 | 1.05 mJ 1.428 mJ |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGWA75H65DFB2 Series
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Documents
Technical documentation and resources