Discrete Semiconductor Products

SI9407BDY-T1-GE3

Active

MOSFET P-CH 60V 4.7A 8SO

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 60V 4.7A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI9407BDY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	4.7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.4 W, 5 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type
Vishay General Semiconductor - Diodes Division SI9407BDY-T1-GE3	MOSFET (Metal Oxide)	4.5 V 10 V	22 nC	8-SOIC	2.4 W 5 W	600 pF	-55 °C	150 °C	120 mOhm	60 V	8-SOIC	3.9 mm	0.154 in	Surface Mount	3 V	20 V	4.7 A	P-Channel
Vishay General Semiconductor - Diodes Division SI9407BDY-T1-E3	MOSFET (Metal Oxide)	4.5 V 10 V	22 nC	8-SOIC	5 W	600 pF	-55 °C	150 °C	120 mOhm	60 V	8-SOIC	3.9 mm	0.154 in	Surface Mount	3 V	20 V	4.7 A	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 4.7A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC

Technical documentation and resources