SI9407 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 60V 4.7A 8SO
| Part | Technology | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Vgs(th) (Max) @ Id | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 4.5 V 10 V | 22 nC | 8-SOIC | 2.4 W 5 W | 600 pF | -55 °C | 150 °C | 120 mOhm | 60 V | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 3 V | 20 V | 4.7 A | P-Channel |
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 4.5 V 10 V | 22 nC | 8-SOIC | 5 W | 600 pF | -55 °C | 150 °C | 120 mOhm | 60 V | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | 3 V | 20 V | 4.7 A | P-Channel |