Specification	SSM6J216FE,LF

Current - Continuous Drain (Id) @ 25°C	4.8 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1040 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Power Dissipation (Max) [Max]	700 mW
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

SSM6J216FE Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -12 V, -4.8 A, 0.032 Ω@4.5V, SOT-563(ES6)

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Technology	Supplier Device Package	FET Type	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage SSM6J216FE,LF	4.8 A	12 V	8 V	1040 pF	32 mOhm	1.5 V 4.5 V	150 °C	MOSFET (Metal Oxide)	ES6	P-Channel	SOT-563 SOT-666	Surface Mount	1 V	700 mW	12.7 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -12 V, -4.8 A, 0.032 Ω@4.5V, SOT-563(ES6)

Technical documentation and resources