High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -12 V, -4.8 A, 0.032 Ω@4.5V, SOT-563(ES6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -12 V, -4.8 A, 0.032 Ω@4.5V, SOT-563(ES6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -12 V, -4.8 A, 0.032 Ω@4.5V, SOT-563(ES6)
| Part | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Technology | Supplier Device Package | FET Type | Package / Case | Mounting Type | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 4.8 A | 12 V | 8 V | 1040 pF | 32 mOhm | 1.5 V 4.5 V | 150 °C | MOSFET (Metal Oxide) | ES6 | P-Channel | SOT-563 SOT-666 | Surface Mount | 1 V | 700 mW | 12.7 nC |