Discrete Semiconductor Products

GAN190-650FBEZ

Active

650 V, 190 MOHM GALLIUM NITRIDE

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

650 V, 190 MOHM GALLIUM NITRIDE

Technical Specifications

Parameters and characteristics for this part

Specification	GAN190-650FBEZ

Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	2.8 nC
Input Capacitance (Ciss) (Max) @ Vds	96 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	190 mOhm
Supplier Device Package	DFN5060-5
Technology	GaNFET (Gallium Nitride)
Vgs (Max) [Max]	7 V
Vgs (Max) [Min]	-1.4 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max) [Min]	Vgs (Max) [Max]	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Vgs(th) (Max) @ Id
Freescale Semiconductor - NXP GAN190-650FBEZ	-1.4 V	7 V	650 V	GaNFET (Gallium Nitride)	125 W	DFN5060-5	N-Channel	96 pF	2.8 nC	11.5 A	190 mOhm	-55 °C	150 °C	6 V	Surface Mount Wettable Flank	8-PowerVDFN	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 11.5A (Tc) 125W (Tc) Surface Mount, Wettable Flank DFN5060-5

Technical documentation and resources