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R1LV0108ESA-5SI#S1
Integrated Circuits (ICs)

R1LV0108ESA-5SI#S1

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Renesas Electronics Corporation

1MB ADVANCED LPSRAM (128K WORD X 8BIT)

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R1LV0108ESA-5SI#S1
Integrated Circuits (ICs)

R1LV0108ESA-5SI#S1

Active
Renesas Electronics Corporation

1MB ADVANCED LPSRAM (128K WORD X 8BIT)

Technical Specifications

Parameters and characteristics for this part

SpecificationR1LV0108ESA-5SI#S1
Access Time55 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization128 K
Memory Size1 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 C
Operating Temperature [Min]-40 ¯C
Package / Case32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package32-TSOP I
TechnologySRAM
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.7 V
Write Cycle Time - Word, Page55 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 2.97

Description

General part information

R1LV0108E Series

The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131, 072-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LV0108E Series has realized higher density, higher performance and low power consumption. The R1LV0108E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 32-pin SOP, 32-pin TSOP and 32-pin sTSOP.