
R1LV0108ESF-5SI#B0
Unknown1MB ADVANCED LPSRAM (128K WORD X 8BIT)
Deep-Dive with AI
Search across all available documentation for this part.

R1LV0108ESF-5SI#B0
Unknown1MB ADVANCED LPSRAM (128K WORD X 8BIT)
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | R1LV0108ESF-5SI#B0 |
|---|---|
| Access Time | 55 ns |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Organization | 128 K |
| Memory Size | 1 Mbit |
| Memory Type | Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | 0.724 in |
| Package / Case | 32-TFSOP |
| Package / Case [custom] | 18.4 mm |
| Supplier Device Package | 32-TSOP I |
| Technology | SRAM |
| Voltage - Supply [Max] | 3.6 V |
| Voltage - Supply [Min] | 2.7 V |
| Write Cycle Time - Word, Page | 55 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
R1LV0108E Series
The R1LV0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131, 072-word by 8-bit, fabricated by Renesas’s high-performance 0. 15um CMOS and TFT technologies. The R1LV0108E Series has realized higher density, higher performance and low power consumption. The R1LV0108E Series is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. It has been packaged in 32-pin SOP, 32-pin TSOP and 32-pin sTSOP.
Documents
Technical documentation and resources