Discrete Semiconductor Products

SIHH21N65EF-T1-GE3

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MOSFET N-CH 650V 19.8A PPAK 8X8

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Discrete Semiconductor Products

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MOSFET N-CH 650V 19.8A PPAK 8X8

Technical Specifications

Parameters and characteristics for this part

Specification	SIHH21N65EF-T1-GE3

Current - Continuous Drain (Id) @ 25°C	19.8 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	102 nC
Input Capacitance (Ciss) (Max) @ Vds	2396 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	156 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	PowerPAK® 8 x 8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIHH21N65E-T1-GE3	10 V	30 V	20.3 A	N-Channel	156 W	650 V	170 mOhm	4 V	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-PowerTDFN	PowerPAK® 8 x 8	99 nC	2404 pF
Vishay General Semiconductor - Diodes Division SIHH21N65EF-T1-GE3	10 V	30 V	19.8 A	N-Channel	156 W	650 V	180 mOhm	4 V	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-PowerTDFN	PowerPAK® 8 x 8		2396 pF	102 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 19.8A (Tc) 156W (Tc) Surface Mount PowerPAK® 8 x 8

Technical documentation and resources