SIHH21 Series

Catalog

MOSFET N-CH 650V 20.3A PPAK 8X8

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIHH21N65E-T1-GE3	10 V	30 V	20.3 A	N-Channel	156 W	650 V	170 mOhm	4 V	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-PowerTDFN	PowerPAK® 8 x 8	99 nC	2404 pF
Vishay General Semiconductor - Diodes Division SIHH21N65EF-T1-GE3	10 V	30 V	19.8 A	N-Channel	156 W	650 V	180 mOhm	4 V	MOSFET (Metal Oxide)	-55 °C	150 °C	Surface Mount	8-PowerTDFN	PowerPAK® 8 x 8		2396 pF	102 nC