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STMICROELECTRONICS STTH3010D
Discrete Semiconductor Products

STTH810DI

Active
STMicroelectronics

FAST / ULTRAFAST DIODE, 1 KV, 8 A, SINGLE, 1.3 V, 47 NS, 60 A

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STMICROELECTRONICS STTH3010D
Discrete Semiconductor Products

STTH810DI

Active
STMicroelectronics

FAST / ULTRAFAST DIODE, 1 KV, 8 A, SINGLE, 1.3 V, 47 NS, 60 A

Technical Specifications

Parameters and characteristics for this part

SpecificationSTTH810DI
Current - Average Rectified (Io)8 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Package / CaseTO-220-2
Reverse Recovery Time (trr)85 ns
Speed500 ns, 200 mA
Supplier Device PackageTO-220Ins
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1000 V
Voltage - Forward (Vf) (Max) @ If2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 599$ 0.98
NewarkEach 1$ 1.17
10$ 0.92
100$ 0.89
500$ 0.85
1000$ 0.82
2500$ 0.76
10000$ 0.71

Description

General part information

STTH810 Series

The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.

Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications.

The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.