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SC-73
Discrete Semiconductor Products

PMT200EN,135

Obsolete
NXP USA Inc.

MOSFET N-CH 100V 1.8A SOT223

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SC-73
Discrete Semiconductor Products

PMT200EN,135

Obsolete
NXP USA Inc.

MOSFET N-CH 100V 1.8A SOT223

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPMT200EN,135
Current - Continuous Drain (Id) (Ta)1.8 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)10 nC
Input Capacitance (Ciss) (Max)475 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-261AA, TO-261-4
Package NameSC-73
Power Dissipation (Max)800 mW, 8.3 W
Rds On (Max)235 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.001m+
32000$ 0.02

CAD

3D models and CAD resources for this part

Description

General part information

PMT2 Series

N-Channel 100 V 1.8A (Ta) 800mW (Ta), 8.3W (Tc) Surface Mount SC-73

Documents

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