PMT2 Series
Manufacturer: NXP USA Inc.
MOSFET N-CH 30V 6A SOT223
| Part | Technology | Vgs(th) (Max) | Gate Charge (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Package / Case | FET Type | Mounting Type | Vgs (Max) | Package Name | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Ta) | Rds On (Max) | Operating Temperature (Min) | Operating Temperature (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP USA Inc. | MOSFET (Metal Oxide) | 2.5 V | 11 nC | 30 V | 8.33 W 820 mW | TO-261-4 TO-261AA | N-Channel | Surface Mount | 20 V | SC-73 | 10 V | 4.5 V | 492 pF | 6 A | 29 mOhm | -55 °C | 150 °C |
NXP USA Inc. | MOSFET (Metal Oxide) | 2.5 V | 14.4 nC | 30 V | 8.33 W 820 mW | TO-261-4 TO-261AA | N-Channel | Surface Mount | 20 V | SC-73 | 10 V | 4.5 V | 588 pF | 7.4 A | 21 mOhm | -55 °C | 150 °C |
NXP USA Inc. | MOSFET (Metal Oxide) | 2.5 V | 10 nC | 100 V | 8.3 W 800 mW | TO-261-4 TO-261AA | N-Channel | Surface Mount | 20 V | SC-73 | 10 V | 4.5 V | 475 pF | 1.8 A | 235 mOhm | -55 °C | 150 °C |
NXP USA Inc. | MOSFET (Metal Oxide) | 2.5 V | 10 nC | 100 V | 8.3 W 800 mW | TO-261-4 TO-261AA | N-Channel | Surface Mount | 20 V | SC-73 | 10 V | 4.5 V | 475 pF | 1.8 A | 235 mOhm | -55 °C | 150 °C |