PMT2 Series
Manufacturer: Freescale Semiconductor - NXP
MOSFET N-CH 30V 6A SOT223
| Part | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Power Dissipation (Max) | Power Dissipation (Max) | Vgs (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Mounting Type | Technology | Package / Case | Rds On (Max) @ Id, Vgs | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Freescale Semiconductor - NXP | -55 °C | 150 °C | N-Channel | 8.33 W | 820 mW | 20 V | 2.5 V | 30 V | Surface Mount | MOSFET (Metal Oxide) | TO-261-4 TO-261AA | 29 mOhm | SC-73 | 492 pF | 11 nC | 4.5 V 10 V | 6 A | ||
Freescale Semiconductor - NXP | -55 °C | 150 °C | N-Channel | 8.33 W | 820 mW | 20 V | 2.5 V | 30 V | Surface Mount | MOSFET (Metal Oxide) | TO-261-4 TO-261AA | SC-73 | 14.4 nC | 4.5 V 10 V | 7.4 A | ||||
Freescale Semiconductor - NXP | -55 °C | 150 °C | N-Channel | 20 V | 2.5 V | 100 V | Surface Mount | MOSFET (Metal Oxide) | TO-261-4 TO-261AA | 235 mOhm | SC-73 | 10 nC | 4.5 V 10 V | 1.8 A | 8.3 W 800 mW | 475 pF | |||
Freescale Semiconductor - NXP | -55 °C | 150 °C | N-Channel | 20 V | 2.5 V | 100 V | Surface Mount | MOSFET (Metal Oxide) | TO-261-4 TO-261AA | 235 mOhm | SC-73 | 10 nC | 4.5 V 10 V | 1.8 A | 8.3 W 800 mW | 475 pF |