Discrete Semiconductor Products

PMN100EPAX

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MOSFET P-CH 60V 2.5A 6TSOP

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Discrete Semiconductor Products

Active

MOSFET P-CH 60V 2.5A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PMN100EPAX

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	616 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-74, SOT-457
Power Dissipation (Max)	7.5 W, 660 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.2 V

Part	Grade	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Qualification	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Technology	Vgs (Max)
Freescale Semiconductor - NXP PMN100EPAX	Automotive	SC-74 SOT-457	130 mOhm	17 nC	AEC-Q101	2.5 A	P-Channel	6-TSOP	616 pF	60 V	-55 °C	175 ░C	4.5 V 10 V	Surface Mount	3.2 V	7.5 W 660 mW	MOSFET (Metal Oxide)	20 V

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General part information

P-Channel 60 V 2.5A (Ta) 660mW (Ta), 7.5W (Tc) Surface Mount 6-TSOP

Technical documentation and resources