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60 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, P-channel Trench MOSFET
60 V, P-channel Trench MOSFET
| Part | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Supplier Device Package | Mounting Type | FET Type | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Grade | Rds On (Max) @ Id, Vgs | Qualification | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Power Dissipation (Max) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | SC-74 SOT-457 | 17 nC | 3.2 V | 6-TSOP | Surface Mount | P-Channel | 60 V | 20 V | 616 pF | Automotive | 130 mOhm | AEC-Q101 | 4.5 V 10 V | 2.5 A | 175 °C | -55 °C | MOSFET (Metal Oxide) | 660 mW | 7.5 W |