Discrete Semiconductor Products

SI4946CDY-T1-GE3

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MOSFET 2N-CH 60V 5.2A/6.1A 8SO

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Discrete Semiconductor Products

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MOSFET 2N-CH 60V 5.2A/6.1A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4946CDY-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.2 A, 6.1 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds	350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.8 W, 2 W
Rds On (Max) @ Id, Vgs	40.9 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	FET Feature	Mounting Type	Configuration	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI4946BEY-T1-E3	41 mOhm	MOSFET (Metal Oxide)	6.5 A	8-SOIC	3.9 mm	0.154 in	25 nC	3.7 W	-55 °C	175 ░C	840 pF	60 V	Logic Level Gate	Surface Mount	2 N-Channel (Dual)	3 V	8-SOIC
Vishay General Semiconductor - Diodes Division SI4946CDY-T1-GE3	40.9 mOhm	MOSFET (Metal Oxide)	5.2 A 6.1 A	8-SOIC	3.9 mm	0.154 in	10 nC	2 W 2.8 W	-55 °C	150 °C		60 V		Surface Mount	2 N-Channel (Dual)	3 V	8-SO	350 pF

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General part information

Mosfet Array 60V 5.2A (Ta), 6.1A (Tc) 2W (Ta), 2.8W (Tc) Surface Mount 8-SO

Technical documentation and resources