SI4946 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
DUAL MOSFET, N CHANNEL, 60 V, 6.5 A, 0.033 OHM
| Part | Rds On (Max) @ Id, Vgs | Technology | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [y] | Package / Case [x] | Gate Charge (Qg) (Max) @ Vgs | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | FET Feature | Mounting Type | Configuration | Vgs(th) (Max) @ Id | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 41 mOhm | MOSFET (Metal Oxide) | 6.5 A | 8-SOIC | 3.9 mm | 0.154 in | 25 nC | 3.7 W | -55 °C | 175 ░C | 840 pF | 60 V | Logic Level Gate | Surface Mount | 2 N-Channel (Dual) | 3 V | 8-SOIC | |
 Vishay General Semiconductor - Diodes Division | 40.9 mOhm | MOSFET (Metal Oxide) | 5.2 A 6.1 A | 8-SOIC | 3.9 mm | 0.154 in | 10 nC | 2 W 2.8 W | -55 °C | 150 °C | 60 V | Surface Mount | 2 N-Channel (Dual) | 3 V | 8-SO | 350 pF |