Discrete Semiconductor Products

STF16NF25

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STMicroelectronics

N-CHANNEL 250 V, 195 MOHM TYP., 14 A STRIPFET II POWER MOSFET IN A TO-220FP PACKAGE

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DocumentsSTF16NF25 | Datasheet AN2842 +16

Discrete Semiconductor Products

STF16NF25

Active

STMicroelectronics

N-CHANNEL 250 V, 195 MOHM TYP., 14 A STRIPFET II POWER MOSFET IN A TO-220FP PACKAGE

Deep-Dive with AI

DocumentsSTF16NF25 | Datasheet AN2842 +16

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF16NF25

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	680 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	235 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STF16NF25 Series

N-channel 250 V, 195 mOhm typ., 14 A STripFET II Power MOSFET in a TO-220FP package

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STF16NF25	4 V	18 nC	235 mOhm	TO-220-3 Full Pack	25 W	TO-220FP	150 °C	-55 °C	14 A	Through Hole	20 V	250 V	10 V	MOSFET (Metal Oxide)	N-Channel	680 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	58	$ 2.61

Description

General part information

STF16NF25 Series

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.