Discrete Semiconductor Products

SQJ464EP-T2_GE3

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MOSFET N-CH 60V 32A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 60V 32A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ464EP-T2_GE3

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	44 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2086 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	45 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs (Max)	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Grade	Current - Continuous Drain (Id) @ 25°C	Qualification	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type
Vishay General Semiconductor - Diodes Division SQJ464EP-T2_GE3	-55 °C	175 ░C	45 W	20 V	PowerPAK® SO-8	N-Channel	4.5 V 10 V	60 V	Automotive	32 A	AEC-Q101	17 mOhm	44 nC	2086 pF	MOSFET (Metal Oxide)	2.5 V	PowerPAK® SO-8	Surface Mount

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General part information

N-Channel 60 V 32A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources