SQJ464 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 32A PPAK SO-8
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Vgs (Max) | Package / Case | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Grade | Current - Continuous Drain (Id) @ 25°C | Qualification | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Technology | Vgs(th) (Max) @ Id | Supplier Device Package | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 175 ░C | 45 W | 20 V | PowerPAK® SO-8 | N-Channel | 4.5 V 10 V | 60 V | Automotive | 32 A | AEC-Q101 | 17 mOhm | 44 nC | 2086 pF | MOSFET (Metal Oxide) | 2.5 V | PowerPAK® SO-8 | Surface Mount |