Discrete Semiconductor Products

SIRC18DP-T1-GE3

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MOSFET N-CH 30V 60A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 30V 60A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIRC18DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	111 nC
Input Capacitance (Ciss) (Max) @ Vds	5060 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max) [Max]	54.3 W
Rds On (Max) @ Id, Vgs	1.1 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Feature	Rds On (Max) @ Id, Vgs	FET Type
Vishay General Semiconductor - Diodes Division SIRC18DP-T1-GE3	MOSFET (Metal Oxide)	111 nC	30 V	PowerPAK® SO-8	2.4 V	5060 pF	Surface Mount	PowerPAK® SO-8	-55 °C	150 °C	-16 V 20 V	54.3 W	60 A	4.5 V 10 V	Schottky Diode (Body)	1.1 mOhm	N-Channel

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General part information

N-Channel 30 V 60A (Tc) 54.3W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources