SIRC18 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 30V 60A PPAK SO-8
| Part | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Package / Case | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Power Dissipation (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | FET Feature | Rds On (Max) @ Id, Vgs | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 111 nC | 30 V | PowerPAK® SO-8 | 2.4 V | 5060 pF | Surface Mount | PowerPAK® SO-8 | -55 °C | 150 °C | -16 V 20 V | 54.3 W | 60 A | 4.5 V 10 V | Schottky Diode (Body) | 1.1 mOhm | N-Channel |