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STW7N95K3
Discrete Semiconductor Products

STW7N95K3

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STMicroelectronics

N-CHANNEL 950 V, 1.1 OHM, 7.2 A, TO-247, ZENER-PROTECTED SUPERMESH3; POWER MOSFET

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STW7N95K3
Discrete Semiconductor Products

STW7N95K3

Active
STMicroelectronics

N-CHANNEL 950 V, 1.1 OHM, 7.2 A, TO-247, ZENER-PROTECTED SUPERMESH3; POWER MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW7N95K3
Current - Continuous Drain (Id) @ 25°C7.2 A
Drain to Source Voltage (Vdss)950 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]34 nC
Input Capacitance (Ciss) (Max) @ Vds1031 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)150 W
Rds On (Max) @ Id, Vgs1.35 Ohm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 350$ 6.41
MouserN/A 1$ 6.16
10$ 5.54
25$ 3.19
100$ 3.10
250$ 2.99
600$ 2.98

Description

General part information

STW7N95K3 Series

The new SuperMESH3™ series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimized vertical structure. In addition to pushing on-resistance significantly down, special attention has been taken to ensure a very good dynamic performances coupled with a very large avalanche capability for the most demanding application.