Discrete Semiconductor Products

SCTW70N120G2V

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STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 21 MOHM TYP., 91 A IN AN HIP247 PACKAGE

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Discrete Semiconductor Products

SCTW70N120G2V

Active

STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 21 MOHM TYP., 91 A IN AN HIP247 PACKAGE

Deep-Dive with AI

DocumentsDatasheet +26

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCTW70N120G2V

Current - Continuous Drain (Id) @ 25°C	91 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	3540 pF
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-55 ░C
Package / Case	TO-247-3
Power Dissipation (Max)	547 W
Supplier Device Package	HiP247™
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4.9 V

SCTW70N120G2V Series

Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package

Part	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max) [Max]	Vgs (Max) [Min]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Mounting Type	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)
STMicroelectronics SCTW70N120G2V	N-Channel	1.2 kV	150 nC	22 V	-10 V	91 A	18 V	4.9 V	Through Hole	TO-247-3	HiP247™	3540 pF	200 °C	-55 ░C	547 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	428	$ 32.55
Mouser	N/A	1	$ 32.85
		10	$ 32.73
		25	$ 23.40
		100	$ 23.25
Newark	Each	1	$ 44.90
		5	$ 44.79
		10	$ 44.68
		25	$ 36.99
		50	$ 36.45
		100	$ 36.29
		250	$ 36.12

Description

General part information

SCTW70N120G2V Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.