Discrete Semiconductor Products

WNSC5D04650D6J

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DIODE SIL CARBIDE 650V 4A DPAK

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Discrete Semiconductor Products

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DIODE SIL CARBIDE 650V 4A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	WNSC5D04650D6J

Capacitance @ Vr, F	138 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	DPAK
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Mounting Type	Speed	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)
WeEn Semiconductors WNSC5D04650D6J	Surface Mount	500 mA	20 µA	0 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	SiC (Silicon Carbide) Schottky	175 ░C	-55 °C	650 V	138 pF	1.7 V	4 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

Diode 650 V 4A Surface Mount DPAK

Technical documentation and resources