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8-DIP
Integrated Circuits (ICs)

MIC4452BN

Obsolete
Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

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Search across all available documentation for this part.

8-DIP
Integrated Circuits (ICs)

MIC4452BN

Obsolete
Microchip Technology

IC GATE DRVR LOW-SIDE 8DIP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMIC4452BN
Channel TypeSingle
Current - Peak Output (Source, Sink) [custom]12 A
Current - Peak Output (Source, Sink) [custom]12 A
Driven ConfigurationLow-Side
Gate TypeN-Channel MOSFET, IGBT
Input TypeNon-Inverting
Mounting TypeThrough Hole
Number of Drivers1
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case0.3 in
Package / Case8-DIP
Package / Case7.62 mm
Rise / Fall Time (Typ) [custom]20 ns
Rise / Fall Time (Typ) [custom]24 ns
Supplier Device Package8-PDIP
Voltage - Supply [Max]18 V
Voltage - Supply [Min]4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

MIC4452 Series

MIC4451 and MIC4452 CMOS MOSFET gate drivers are tough, efficient, and easy to use. The MIC4451 is an inverting driver, while the MIC4452 is a non-inverting driver. Both versions are capable of 12 A (peak) output and can drive the largest MOSFETs with an improved safe operating margin. The MIC4451/4452 accepts any logic input from 2.4 V to VS without external speed-up capacitors or resistor networks. Proprietary circuits allow the input to swing negative by as much as 5 V without damaging the part. Additional circuits protect against damage from electrostatic discharge. MIC4451/4452 gate drivers can replace three or more discrete components, reducing PCB area requirements, simplifying product design, and reducing assembly cost. Modern Bipolar/CMOS/DMOS construction guarantees freedom from latch-up. The rail-to-rail swing capability of CMOS/DMOS helps ensure adequate gate voltage to the MOSFET during power up/down sequencing. Since these devices are fabricated on a self-aligned process, they have very low crossover current, run cool, use little power, and are easy to drive.

Documents

Technical documentation and resources

No documents available