Discrete Semiconductor Products

STW90NF20

Obsolete

MOSFET N-CH 200V 83A TO247-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 83A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW90NF20

Current - Continuous Drain (Id) @ 25°C	83 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	164 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5736 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	TO-247-3
Power Dissipation (Max)	300 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Power Dissipation (Max)	Package / Case
STMicroelectronics STW90NF20	23 mOhm	200 V	-50 °C	150 °C	MOSFET (Metal Oxide)	83 A	164 nC	5736 pF	TO-247-3	4 V	Through Hole	10 V	N-Channel	20 V	300 W	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.17

General part information

N-Channel 200 V 83A (Tc) 300W (Tc) Through Hole TO-247-3

Technical documentation and resources